Real dimensional simulation of anisotropic etching of silicon in CF4+O2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Surface processes in low pressure plasmas
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4. Smoothing of the Si surface using CF4/O2down‐flow etching
5. Simulation of dry etching through a mask
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