Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures-Reference-Cited by-同舟云学术

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Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures

Published:1997-11 Issue:9 Volume:82 Page:4651-4660
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Burke Aaron,Braeckelmann Gregory,Manger Dirk,Eisenbraun Eric,Kaloyeros Alain E.,McVittie Jim P.,Han Joseph,Bang David,Loan James F.,Sullivan John J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366204

Reference16 articles.

1. Two precursor model for low-pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate

2. A fundamental feature scale model for low pressure deposition processes

3. Low‐Knudsen‐number transport and deposition

4. Advanced multilayer metallization schemes with copper as interconnection metal

5. Advanced multilayer metallization schemes with copper as interconnection metal

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1. Superconformal chemical vapor deposition using plasma-generated atomic species as a consumable growth inhibitor;Journal of Vacuum Science & Technology A;2021-07

2. Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films;Chemistry of Materials;2021-02-09

3. Energy conversion efficiency in low- and atmospheric-pressure plasma polymerization processes with hydrocarbons;Physical Chemistry Chemical Physics;2019

4. High-Aspect-Ratio Parallel-Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition;Advanced Materials Interfaces;2016-07-07

5. The Application of Level Set Method for Simulation of PECVD/LPCVD Processes;Physics of Semiconductor Devices;2014

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