Dielectric etching for 0.18 μm technologies

Author:

Berruyer P.,Vinet F.,Feldis H.,Blanc R.,Lerme M.,Morand Y.,Poiroux T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO[sub 2] etching process;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

2. Modeling of magnetically enhanced capacitively coupled plasma sources: Two frequency discharges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007

3. Real-time monitoring of charge accumulation during pulse-time-modulated plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-11

4. Simulations of magnetized capacitively coupled plasmas operating at constant power and voltage;Plasma Sources Science and Technology;2005-04-05

5. Mitigation of accumulated electric charge by deposited fluorocarbon film during SiO2 etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-03

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