Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. Stable zirconium silicate gate dielectrics deposited directly on silicon
2. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
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5. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
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1. Influence of Mg ion concentration in ZrO2 gate dielectric layered silicon based MOS capacitors for memory applications: Thorough understanding of conduction processes;Materials Science in Semiconductor Processing;2019-01
2. Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics;Journal of Materials Science;2018-08-06
3. Improvement of dielectric properties of ZrO2 films prepared by limited reaction sputtering;2008 9th International Conference on Solid-State and Integrated-Circuit Technology;2008-10
4. Growth and dielectric properties of tetragonal ZrO2films by limited reaction sputtering;Journal of Physics D: Applied Physics;2008-08-21
5. Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering—On growth delay time at initial growth stage;Applied Surface Science;2008-07
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