Formation of polymeric layer during silicon etching in CF2Cl2 plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference16 articles.
1. Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions
2. Plasma processing of semiconductors;Flamm,1997
3. Simulation of silicon dry etching through a mask in low pressure fluorine-based plasma
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5. Aspect-ratio-dependent charging in high-density plasmas
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1. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma;Journal of Physics: Conference Series;2016-08
2. Low-Roughness and Easily-Etched Transparent Conducting Oxides with a Stack Structure of ITO and IZO;ECS Journal of Solid State Science and Technology;2013
3. Dry Etching of ITO Thin Films by the Addition of Gases in Cl2/BCl3Inductivity Coupled Plasma;Transactions on Electrical and Electronic Materials;2012-06-25
4. Monochromatic soft-x-ray-induced reactions of CF2Cl2adsorbed on Si(111)-7 × 7 studied by continuous-time photon-stimulated desorption spectroscopy near the F(1s) edge;Journal of Physics: Condensed Matter;2011-10-13
5. Surface properties of etched ITO thin films using high density plasma;Thin Solid Films;2010-09
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