Dry Etching of ITO Thin Films by the Addition of Gases in Cl2/BCl3Inductivity Coupled Plasma-Reference-Cited by-同舟云学术

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Dry Etching of ITO Thin Films by the Addition of Gases in Cl2/BCl3Inductivity Coupled Plasma

Published:2012-06-25 Issue:3 Volume:13 Page:157-161
ISSN:1229-7607
Container-title:Transactions on Electrical and Electronic Materials
language:en
Short-container-title:Transactions on Electrical and Electronic Materials

Author:

Joo Young-Hee,Woo Jong-Chang,Choi Kyung-Rok,Kim Han-Soo,Wi Jae-Hyung,Kim Chang-Il

Publisher

The Korean Institute of Electrical and Electronic Material Engineers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kieeme/JAKO201219240565225.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions;Nanomaterials;2023-06-30

2. Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar;Materials Science in Semiconductor Processing;2023-06

3. Optimal design and fabrication of ITO photonic crystal using e-beam patterned hydrogen silsesquioxane resist;Journal of Vacuum Science & Technology B;2020-03

4. Surface-Enhanced Infrared Absorption for the Periodic Array of Indium Tin Oxide and Gold Microdiscs: Effect of in-Plane Light Diffraction;ACS Photonics;2018-02-03

5. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma;Journal of Physics: Conference Series;2016-08

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