Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar-Reference-Cited by-同舟云学术

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Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar

Published:2023-06 Issue: Volume:160 Page:107395
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hong Jong Woo,Cho Hyun Min,Jeong Yu Gwang,Jung Da Woon,Yeo Yun Jong,Kang Ji Eun,Kim Hee Ju,Tak Hyun Woo,Yeom Geun Young,Kim Dong Woo

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Room temperature deposition of very thin and flexible crystalline ITO thin film using 3-D facing-magnetron sputtering plasma source;Wen;Vacuum,2021

2. Improved electrical and optical properties of ultra-thin tin doped indium oxide (ITO) thin films by a 3-dimensionally confined magnetron sputtering source;Wen;Sci. Adv. Mater.,2021

3. Excimer Ablation of ITO on Flexible Substrates for Large Format Display Applications;Ghandour,2002

4. Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching;Leem;Solid State Electron.,2007

5. Outcoupling enhancement of OLEDs with a randomly distributed ITO pattern fabricated by maskless wet etching method;Jang;IEEE/OSA Journal of Display Technology,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas;Applied Surface Science;2024-10

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