Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source-Reference-Cited by-同舟云学术

Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

Published:2021-08-01 Issue:8 Volume:13 Page:1498-1505
ISSN:1947-2935
Container-title:Science of Advanced Materials
language:en
Short-container-title:sci adv mater

Author:

Wen Long¹,Sahu Bibhuti-B²,Han Jeon-Geon¹,Yeom Geun-Young¹

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea

2. Department of Energy Science and Engineering, IIT Delhi 110016, India

Abstract

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.

Publisher

American Scientific Publishers

Subject

General Materials Science

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