XANES, EXAFS and photoluminescence investigations on the amorphous Eu:HfO2
Author:
Funder
Korea Institute of Science and Technology
NRF
Publisher
Elsevier BV
Subject
Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Reference47 articles.
1. Atomic layer etching of ultra-thin HfO2film for gate oxide in MOSFET devices
2. Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures
3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
4. Optical and electrical properties of plasma-oxidation derived HfO 2 gate dielectric films
5. Role of high-k gate insulators for oxide thin film transistors
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