Atomic layer etching of ultra-thin HfO2film for gate oxide in MOSFET devices-Reference-Cited by-同舟云学术

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Atomic layer etching of ultra-thin HfO2film for gate oxide in MOSFET devices

Published:2009-02-09 Issue:5 Volume:42 Page:055202
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Park Jae Beom,Lim Woong Sun,Park Byoung Jae,Park Ih Ho,Kim Young Woon,Yeom Geun Young

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=5/a=055202/pdf

Reference15 articles.

1. CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

2. Dielectric property and thermal stability of HfO2 on silicon

3. Ultrathin zirconium oxide films as alternative gate dielectrics

4. Structure and stability of ultrathin zirconium oxide layers on Si(001)

5. Current Transport Mechanism for HfO[sub 2] Gate Dielectrics with Fluorine Incorporation

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