Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference56 articles.
1. Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si
2. Development of hafnium based high-k materials—A review
3. Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements
4. The structure and electrical properties of HfTaON high-k films prepared by DIBSD
5. Atomic layer etching of ultra-thin HfO2film for gate oxide in MOSFET devices
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