The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)-Reference-Cited by-同舟云学术

The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Published:2023-07 Issue:21 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Yükseltürk Esra,Bengi Seda^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-10983-w.pdf

Reference62 articles.

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2. Y. Şafak Asar, A. Feizollahi Vahid, N. Basman, H.G. Çetinkaya, Ş Altındal, Frequency-dependent electrical parameters and extracted voltage-dependent surface states in Al/DLC/p-Si structure using the conductance method. Appl. Phys. A. 129, 358 (2023)

3. Ö. Sevgili, Y. Azizian-Kalandaragh, Ş Altındal, Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures. Physica B 587, 412122 (2020)

4. S. Bengi, M.M. Bülbül, Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes. J. Optoelectron. Adv. Mater. 16, 451–456 (2014)

5. D. Ata, S. Altındal Yeriskin, A. Tataroğlu, M. Balbasi, Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure. J. Phys. Chem. Solids 169, 110861 (2022)

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