Characterisation of semiconductor heterostructures by capacitance methods-Reference-Cited by-同舟云学术

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Characterisation of semiconductor heterostructures by capacitance methods

Published:1999-07 Issue:7 Volume:30 Page:665-672
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Palmer D.W

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. Semiconductor Devices: Physics and Technology;Sze,1985

2. Growth and Characterisation of Semiconductors;Palmer,1990

3. Influence of deep traps on the measurement of free‐carrier distributions in semiconductors by junction capacitance techniques

4. The electrical characterisation of semiconductors

5. Heterojunction Band Discontinuities;Forrest,1987

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4. Nondestructive method for evaluation of electrical parameters of AlGaN/GaN HEMT heterostructures;physica status solidi (c);2013-01-22

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