Energy band diagram and energy band offsets of Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (p)/Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (n)/InAs 0.9 Sb 0.1 double interface determined by capacitance-voltage measurements-Reference-Cited by-同舟云学术

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Energy band diagram and energy band offsets of Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (p)/Ga 0.6 Al 0.4 As 0.034 Sb 0.966 (n)/InAs 0.9 Sb 0.1 double interface determined by capacitance-voltage measurements

Published:2017-08 Issue: Volume:66 Page:50-55
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Cheriet A.,Mebarki M.,Christol P.,Aït-kaci H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. InAsSb p-n junction light emitting diodes grown by liquid phase epitaxy

2. InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

3. Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures

4. Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

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1. Energy band offsets and charge transport process in an InAsSb based nBn structure: A numerical simulation;Micro and Nanostructures;2022-12

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3. Analysis of Band Alignment Engineering and Interface Defects on a GaAs/GaSb Heterostructure Solar Cell;physica status solidi (a);2022-05-05

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