Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures-Reference-Cited by-同舟云学术

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Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08Heterostructures

Published:2000-09-15 Issue:Part 1, No. 9A Volume:39 Page:5039-5043
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gong Xiu Ying,Kan Hirofumi,Makino Takamitsu,Iida Takefumi,Watanabe Kenzo,Gao Yu Zhu,Aoyama Mitsuru,Rowell Nelson L.,Yamaguchi Tomuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method;Materials Science in Semiconductor Processing;2023-11

2. Self-formation of InAs/InGaAsSb type-II superlattice structures on InP substrates by MBE and their application to mid-infrared LEDs;AIP Advances;2022-08-01

3. Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods;Materials Science in Semiconductor Processing;2021-01

4. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods;Journal of Electronic Materials;2020-03-28

5. Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots;Applied Physics Letters;2020-02-10

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