Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Published:2022-11-25 Issue:3 Volume:66 Page:1157-1164
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Wang Zhengpeng,Gong He-He,Yu Xin-Xin,Ji Xiaoli,Ren Fang-Fang,Yang Yi,Gu Shulin,Zheng Youdou,Zhang Rong,Ye Jiandong

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2244-y.pdf

Reference50 articles.

1. Pearton SJ, Yang J, Cary Iv PH, et al. A review of Ga2O3 materials, processing, and devices. Appl Phys Rev, 2018, 5: 011301

2. Zhang J, Shi J, Qi DC, et al. Recent progress on the electronic structure, defect, and doping properties of Ga2O3. APL Mater, 2020, 8: 020906

3. Hao W, He Q, Zhou X, et al. 2.6 kV NiO/Ga2O3 heterojunction diode with superior high-temperature voltage blocking capability. In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vancouver, BC, 2022, 105–108

4. Zhou X, Liu Q, Hao W, et al. Normally-off β-Ga2O3 power heterojunction field-effect-transistor realized by p-NiO and recessed-gate. In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vancouver, BC, 2022, 101–104

5. Zhang J, Dong P, Dang K, et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nat Commun, 2022, 13: 3900

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Enhancement of NiO_x/β-Ga₂O₃ Heterojunction Diodes by Synergistic Interface Engineering;IEEE Transactions on Electron Devices;2024-08

2. Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate;Crystals;2024-07-07

3. Trap-assisted tunneling in type II Ag2O/β-Ga2O3 self-powered solar blind photodetector;Sensors and Actuators A: Physical;2024-07

4. Dual-Schottky-junctions coupling device based on ultra-long β-Ga₂O₃single-crystal nanobelt and its photoelectric properties;Journal of Semiconductors;2024-05-01

5. Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions;Journal of Applied Physics;2024-04-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3