2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability
Author:
Affiliation:
1. University of Science and Technology of China,Hefei,China
Funder
Chinese Academy of Sciences
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813680.pdf?arnumber=9813680
Reference13 articles.
1. Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
2. 2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
3. Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination
4. β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
5. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
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3. 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C;IEEE Electron Device Letters;2023-08
4. Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers;Crystals;2023-07-28
5. The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers;Crystals;2023-07-19
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