Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate
Author:
Affiliation:
1. University of Science and Technology of China,School of Microelectronics,Hefei,China
Funder
Chinese Academy of Sciences
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813678.pdf?arnumber=9813678
Reference14 articles.
1. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
2. Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy
3. Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing
4. Fast Switching beta-Ga2O3 Power MOSFET With a Trench-Gate Structure;dong;IEEE Electron Device Lett,2019
5. Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
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