Material and device issues of AlGaN/GaN HEMTs on silicon substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
1. AlGaN/GaN high electron mobility transistors on Si (111) substrates;Chumbes;IEEE Trans. Electron Devices,2001
2. AlGaN/GaN HEMTs on silicon substrates with fT of 32/20GHz and fmax of 27/22GHz for 0.5/0.7μm gate length;Javorka;Electron. Lett.,2002
3. High-power AlGaN/GaN HEMTs on resistive silicon substrate;Hoël;Electron. Lett.,2002
4. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method;Kuzmı́k;IEEE Trans. Electron Devices,2002
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1. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11
2. Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE;Journal of Electronic Materials;2014-02-15
3. Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme;International Journal of Electrochemical Science;2013-08
4. Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
5. Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT;Semiconductor Science and Technology;2012-12-13
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