Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme-Reference-Cited by-同舟云学术

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Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme

Published:2013-08 Issue:8 Volume:8 Page:10280-10292
ISSN:1452-3981
Container-title:International Journal of Electrochemical Science
language:en
Short-container-title:International Journal of Electrochemical Science

Author:

Chang Sheng-Po

Publisher

Elsevier BV

Subject

Electrochemistry

Reference28 articles.

1. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

3. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

4. Multilayer (Al,Ga)N Structures for Solar-Blind Detection

5. Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

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1. Short Communication: Metal-insulator-semiconductor-insulator-metal structure of TiO2/SiO2 Thin Films for Ultraviolet (UV) Photodetectors;International Journal of Electrochemical Science;2015-11

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