Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
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2. Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p–i–n structures by photoreflectance;Dickey;Microelectron. Engng,1998
3. Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum-wells grown on (111)B GaAs substrates;Cho;J. Appl. Phys.,2001
4. Temperature-dependent polarization in [111] InxGa1−xAs–AlxGa1−xAs quantum-wells;Bahder;Phys. Rev. B,1994
5. Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy;Anan;Appl. Phys. Lett.,1992
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2. Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates;Journal of Semiconductors;2022-07-01
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4. Guide to the Literature of Piezoelectricity and Pyroelectricity. 23;Ferroelectrics;2005-08
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