A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference24 articles.
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1. Simulation and comparision of GaAs, AlGaAs and GaInP barriers in InGaAs quantum well lasers;IOP Conference Series: Materials Science and Engineering;2019-08-01
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