Author:
Huibo Yuan,Li Lin,Zeng Lina,Zhang Jing,Li Zaijin,Qu Yi,Ma Xiaohui,Liu Guojun
Abstract
Abstract
InGaAs quantum wells with GaAs, AlGaAs and GaInP barriers have been simulated, respectively. The InGaAs/GaInP structure reveals a high material gain which could be nearly 1.4 times of that of InGaAs/GaAs. Threshold current of InGaAs/GaInP structure is less than half of InGaAs/AlGaAs. A high slope efficiency of 1.57 W/A from InGaAs/GaInP structure is observed with indium content as high as 0.35. InGaAs/GaInP structure will be the most appropriate candidate to fabricate a laser diode with high slope efficiency and low threshold current.