Structural parameters governing properties of GaInSb/InAs infra-red detectors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference23 articles.
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3. Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer;Cheng;J. Crystal Growth,2000
4. Uncooled InAs–GaSb type-II infrared detectors grown on GaAs substrates for the 8–12μm atmospheric window;Mohseni;IEEE J. Quantum Electron.,1999
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