Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Novel type‐II quantum cascade lasers
2. Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
3. Proposal for strained type II superlattice infrared detectors
4. Impact ionization coefficients of electrons and holes in
5. Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
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1. Low-temperature thermolysis behavior of tetramethyl- and tetraethyldistibines;Journal of the American Society for Mass Spectrometry;2008-09-01
2. Scattering from interface islands: enhanced lifetimes through non-linear effect of cation defects;Physica E: Low-dimensional Systems and Nanostructures;2001-11
3. Structural parameters governing properties of GaInSb/InAs infra-red detectors;Microelectronics Journal;2001-07
4. Effect of interface localization on elastic scattering in AlSb/InAs superlattice infrared detectors;Physical Review B;2001-03-23
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