Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors-Reference-Cited by-同舟云学术

Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors

Published:1999-04 Issue:1 Volume:426 Page:51-55
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Žontar D,Cindro V,Kramberger G,Mikuž M

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

1. Radiation hardness of silicon detectors – a challenge from high-energy physics

2. M.S. Lazo et al., Silicon and silicon dioxide neutron damage functions, Proc. Fast Burt. React. Workshop, Sandia National Laboratories 1987, SAND-87-0098, vol. 1, pp. 85–103.

3. Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

4. Studies of radiation hardness of oxygen enriched silicon detectors

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