Author:
Müller-Gosewisch J.-O.,Dierlamm A.,Nürnberg A.
Abstract
Abstract
Silicon strip sensors of upcoming tracking detectors in high
luminosity colliders usually consist of a p-doped bulk with n-type
strip implants. The general consensus is that such a design
requires an additional interstrip isolation structure such as a
p-stop implant. If there is no additional implant between the
strips, it is expected that the strip isolation will be
insufficient. Before irradiation, impurities and defects in the
material lead to positive charge in the oxide and Si/SiO_2
interface which attracts electrons from the bulk. Those electrons
accumulate just beneath the surface and between the n+ strip or
pixel implants, which decreases the interstrip resistance
significantly. Ionising radiation introduces even more charge
inside the silicon dioxide, which further decreases the interstrip
resistance. Contrary to that expectation of a decreasing interstrip
resistance due to irradiation, a high interstrip resistance was
sometimes observed after proton irradiation. Hence, bulk defects
induced by proton irradiation seem to have a non-negligible impact
on the strip isolation. Therefore, an irradiation campaign with
sensors without any interstrip isolation implant has been performed.
The use of sensors without isolation structures provides deeper
insight into the dominant isolation effects. The sensors'
performance is first evaluated before irradiation. Afterwards, a
set of sensors is irradiated with different particles in order to
systematically introduce a mixture of surface and bulk defects.
This enables the distinction and leads to a better understanding of
the different effects. Finally, a combined TCAD model is derived
which is able to describe the beneficial effect of bulk defects and
the complicated interplay between surface and bulk damage.
Subject
Mathematical Physics,Instrumentation
Cited by
1 articles.
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