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Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

  • Published:1996-01 Issue:1-3 Volume:36 Page:282-285
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Romano-Rodriguez A.,Serre C.,Calvo-Barrio L.,Pérez-Rodríguez A.,Morante J.R.,Kögler R.,Skorupa W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring of SiC nanoprecipitates formed in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

2. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-03

3. FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE;Surface Review and Letters;2007-12

4. Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source;Materials Letters;2007-08

5. Formation of SiC Thin Films by Ion Beam Synthesis;Silicon Carbide;2004
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