Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. High‐temperature ion beam synthesis of cubic SiC
3. Silicon carbide: synthesis and processing
4. Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon
5. Formation and characterization of SiC-Si heterojunction by carbon implantation with a MEVVA ion source
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