Be delta-doped layers in GaAs studied by scanning tunnelling microscopy-Reference-Cited by-同舟云学术

Be delta-doped layers in GaAs studied by scanning tunnelling microscopy

Published:1995-12 Issue:1-3 Volume:35 Page:485-488
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Koenraad P.M.,Johnson M.B.,Salemink H.W.M.,van der Vleuten W.C.,Wolter J.H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement

2. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study

3. P.M. Koenraad, Electron mobility in delta doped layers, in E.F. Schubert (ed.), Delta Doping of Semiconductors, Cambridge University Press, in press.

4. Direct imaging of δ‐doped layers in GaAs

5. Incorporation of Si in δ‐doped GaAs studied by local vibrational mode spectroscopy

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