Direct imaging of δ‐doped layers in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103185
Reference9 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
3. Spatial localization of Si in selectively δ-doped AlxGa1−xAs/GaAs heterostructures for high mobility and density realization
4. Nonrandom doping and elastic scattering of carriers in semiconductors
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1. Controlled anisotropic ordering of Be deposited on the GaAs(001) surface;Surface Science;1998-03
2. STM imaging of Be delta doped layers in GaAs;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
3. Many-body and disorder effects in the optical spectra of extremely high density Be δ-doped GaAs;Solid State Communications;1996-11
4. Band structure of holes inp-type δ-doping quantum wells and superlattices;Physical Review B;1996-04-15
5. Be delta-doped layers in GaAs studied by scanning tunnelling microscopy;Materials Science and Engineering: B;1995-12
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