Spatial localization of Si in selectively δ-doped AlxGa1−xAs/GaAs heterostructures for high mobility and density realization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Quantum size effect in monolayer-doped heterostructures
2. GaAs structures with electron mobility of 5×106cm2/V s
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4. Quantum size effect in δ-doped AlGaAs heterostructures
5. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
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3. Recent Developments in Gas Source Molecular Beam Epitaxy;MRS Proceedings;1992
4. Diffusion limited δ-doping profiles in GaAs grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1990-10
5. Atomic diffusion and surface segregation of Si in δ-doped GaAs grown by gas source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-03
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