Short-period (Ga,Mn)As/(Al,Ga)As multilayer structures studied by cross-sectional scanning tunneling microscopy-Reference-Cited by-同舟云学术

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Short-period (Ga,Mn)As/(Al,Ga)As multilayer structures studied by cross-sectional scanning tunneling microscopy

Published:2011-09-16 Issue:10 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mauger S. J. C.,Bozkurt M.,Koenraad P. M.,Giddings A. D.,Campion R. P.,Gallagher B. L.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.104432/fulltext

Reference22 articles.

1. Magnetoelectronics

2. Making Nonmagnetic Semiconductors Ferromagnetic

3. Electrical spin injection in a ferromagnetic semiconductor heterostructure

4. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

5. Interlayer coupling in ferromagnetic semiconductor superlattices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures;Chemical Reviews;2016-02-22

2. Structural, electronic, and magnetic properties of single MnAs nanoclusters in GaAs;Applied Physics Letters;2014-12-08

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