MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Growth and characterization of AlGaInAs lattice matched to InP grown by molecular‐beam epitaxy
2. Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular‐beam expitaxy
3. A. Hase, H. Künzel, D. R. T. Zahn and W. Ritcher, J. Appl. Phys., submitted for publication.
4. Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular‐beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Barrier composition dependence of the emission properties of quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;1997-03
2. Molecular beam epitaxial growth of strained AIGalnAs multi-quantum well lasers on InP;Journal of Electronic Materials;1996-06
3. Composition inhomogeneities in the buffer layers of In0.52Al0.48As/InxGa1−xAs/InP multiquantum well structures driven by In segregation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05
4. In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth;Journal of Crystal Growth;1995-05
5. Role of molecular beam epitaxy in the field of optoelectronics;Microelectronics Journal;1994-11
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