Growth and characterization of AlGaInAs lattice matched to InP grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340252
Reference16 articles.
1. Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular‐beam expitaxy
2. Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As
3. Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
4. MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
5. MBE growth of AlxGayIn1−x−yAs for a DHBT structure
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2. A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP;Applied Physics B;2010-04-09
3. Parametric study on optical properties of digital-alloy In(Ga1−zAlz)As/InP grown by molecular-beam epitaxy;Applied Physics Letters;2004-02-09
4. Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors;Semiconductor Science and Technology;2000-11-15
5. Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus;Le Journal de Physique IV;1999-02
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