Critical thickness of an epilayer grown on a finite substrate with different elastic constants
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy
2. Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode
3. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth
4. Effect of elastic constants on the critical thickness of an epilayer
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4. Modeling and experiments on epitaxially grown multilayers with implications to critical thickness;Journal of Electronic Materials;2005-05
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