Effect of elastic constants on the critical thickness of an epilayer
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. The Mechanics of Dislocations in Strained-Layer Semiconductor Materials
2. The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructures
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1. Elastic fields due to an edge dislocation in an isotropic film-substrate by the image method;Acta Mechanica;2009-09-09
2. Critical thickness for misfit twinning in an epilayer;International Journal of Solids and Structures;2008-06
3. Strain relaxation in heteroepitaxial films by misfit twinning. I. Critical thickness;Journal of Applied Physics;2007-03-15
4. Elastic study on singularities interacting with interfaces using alternating technique;International Journal of Solids and Structures;2002-03
5. Critical epitaxial film thickness for forming interface dislocations;Materials Science and Engineering: A;2001-07
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