Strain relaxation in heteroepitaxial films by misfit twinning. I. Critical thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2433368
Reference42 articles.
1. TEM studies of stress relaxation in GaAsN and GaP thin films
2. Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)
3. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers
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