Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103375
Reference12 articles.
1. Silicon/germanium strained layer superlattices
2. The n-channel SiGe/Si modulation-doped field-effect transistor
3. Structurally induced optical transitions in Ge-Si superlattices
4. Structure and optical properties of Ge‐Si ordered superlattices
5. Dislocation nucleation near the critical thickness in GeSi/Si strained layers
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