High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104041
Reference5 articles.
1. High-performance submicrometer AlInAs-GaInAs HEMT's
2. Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistors
3. Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
4. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
5. A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
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2. Critical thickness of an epilayer grown on a finite substrate with different elastic constants;Materials Science and Engineering: A;2001-07
3. Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension;Materials Science and Engineering: B;1996-12
4. Formation of a Buried Soft Layer in Sic for ”Compliant Substrate” by Ion Implantation;MRS Proceedings;1996
5. Surface photovoltage spectroscopy of InxAl1−xAs epilayers;Journal of Applied Physics;1995-12-15
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