Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension-Reference-Cited by-同舟云学术

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Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension

Published:1996-12 Issue:1-3 Volume:42 Page:146-152
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Krawczyk S.K.,Gendry M.,Klingelhöfer C.,Venet T.,Buchheit M.,Blanchet R.,Hollinger G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy

2. Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

3. Growth- and Process Induced Defects in Semiconductors;Mahajan,1989

4. Scanning Photoluminescence Evaluation of Semiconductors;Krawczyk,1994

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer;Solar Energy Materials and Solar Cells;2019-06

2. Semiconductors, Scanning Photoluminescence Evaluation of;Encyclopedia of Materials: Science and Technology;2001

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