Luminescence and X-ray diffraction studies of Ge nanocrystals in amorphous silicon oxide-Reference-Cited by-同舟云学术

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Luminescence and X-ray diffraction studies of Ge nanocrystals in amorphous silicon oxide

Published:2000-06 Issue:1 Volume:286 Page:161-164
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Ng V,Ng S.P,Thio H.H,Choi W.K,Wee A.T.S,Jie Y.X

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Light Emission from Silicon

2. Growth of Ge Microcrystals in SiO2Thin Film Matrices: A Raman and Electron Microscopic Study

3. Rapid isothermal processing

4. Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of nc-Ge embedded in SiO2/Si matrix;Radiation Effects and Defects in Solids;2009-08

2. Ge-doping dependence of gamma-ray induced germanium lone pair centers in Ge-doped silica;physica status solidi (b);2008-08-25

3. Structural studies of Ge nanocrystals embedded in SiO2 matrix;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-11

4. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films;Nanotechnology;2007-01-10

5. Raman and infrared spectroscopy of Ge nanoparticles embedded in ZnO matrix;Applied Surface Science;2005-06

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