Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films-Reference-Cited by-同舟云学术

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Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

Published:2007-01-10 Issue:6 Volume:18 Page:065702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Rodríguez A,Ortiz M I,Sangrador J,Rodríguez T,Avella M,Prieto A C,Torres Á,Jiménez J,Kling A,Ballesteros C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=6/a=065702/pdf

Reference32 articles.

1. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

2. Origin of charge trapping in germanium nanocrystal embedded SiO2 system: Role of interfacial traps?

3. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

4. Correlation between microstructural and electroluminescent properties of Ge–SiO2 composite films

5. Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix

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