Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification-Reference-Cited by-同舟云学术

Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification

Published:2021-07-14 Issue:8 Volume:21 Page:4746-4756
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zheng Quan¹^ORCID,Xiao Ting¹,Tian Zean¹²^ORCID,Gao Tinghong¹,Liang Yongchao¹,Chen Qian¹,Xie Quan¹

Affiliation:

1. Institute of Advanced Optoelectronic Materials and Technology of School of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

2. College of Computer Science and Electronic Engineering, Hunan University, Changsha 410082, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00586

Reference34 articles.

1. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

2. Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices

3. The structure and properties of nanosize crystalline silicon films

4. Optical characteristics of laser-crystallized Si1 xGexnanocrystals

5. Embedded SiGe nanoparticles formed by atom beam co-sputtering of Si, Ge, SiO2

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