Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices-Reference-Cited by-同舟云学术

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Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices

Published:2005-12 Issue: Volume:124-125 Page:138-142
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Teixeira Ricardo Cotrin,Doi Ioshiaki,Zakia Maria Beny Pinto,Diniz José Alexandre,Swart Jacobus Willibrordus

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Submicron transferred-substrate heterojunction bipolar transistors

2. Influence of ton the deposition rate of Si-poly obtained by vertical LPCVD;Teixeira,2003

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification;Crystal Growth & Design;2021-07-14

2. Effects of temperature and deposition time on the structural and optical properties of Si1−Ge nanoparticles grown by low pressure chemical vapor deposition;Thin Solid Films;2015-03

3. Influence of a Thickness and Percentage of Ge in Optical Properties of Thin Films of Si1-xGex Grown by LPCVD;ECS Transactions;2012-08-30

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