Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier
Author:
Affiliation:
1. INRS-EMT, 1650 boul. Lionel-Boulet, Varennes, Quebec J3X 1S2, Canada
2. LARN, Centre de Recherche en Physique de la Matière et du Rayonnement, University of Namur (FUNDP), B-5000 Namur, Belgium
Funder
MRIF
PRIMA Quebec
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5002693
Reference35 articles.
1. Energy conversion approaches and materials for high-efficiency photovoltaics
2. Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2
3. Multiple Exciton Generation in Colloidal Silicon Nanocrystals
4. Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption
5. Dielectric engineering of Ge nanocrystal/SiO2 nanocomposite thin films with Ge ion implantation: Modeling and measurement
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