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Reference50 articles.
1. S. Bangsaruntip, G.M. Cohen, A. Majumdar, J.W. Sleight, Universality of short-channel effects in undoped-body silicon nanowire mosfets. IEEE Electron Device Lett. 31, 903–905 (2010)
2. K. Young, Short-channel effect in fully depleted soi mosfets. IEEE Trans. Electron Devices 36, 399–402 (1989). https://doi.org/10.1109/16.19942
3. V. Narula, A. Saini, M. Agarwal, Correlation of core thickness and core doping with gate & spacer dielectric in rectangular core shell double gate junctionless transistor. IETE J. Res. 2021, 1–12 (2021)
4. W.Y. Choi, B.G. Park, J.D. Lee, T.J.K. Liu, Tunneling field-effect transistors (tfets) with subthreshold swing (ss) less than 60 mv/dec. IEEE Electron Device Lett. 28, 743–745 (2007). https://doi.org/10.1109/LED.2007.901273
5. S. Sahay, M.J. Kumar, Junctionless field-effect transistors: design, modeling and simulation (Wiley, Hoboken, 2019)