Hyperdoping of Si by ion implantation and pulsed laser melting-Reference-Cited by-同舟云学术

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Hyperdoping of Si by ion implantation and pulsed laser melting

Published:2017-05 Issue: Volume:62 Page:103-114
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yang Wenjie,Mathews Jay,Williams J.S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference99 articles.

1. Laser Annealing of Semiconductors;Mayer,1982

2. Laser and Electron Beam Processing of Materials;White,1980

3. Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon;Newman;Appl. Phys. Lett.,2011

4. Laser induced single-crystal transition in polycrystalline silicon;Vitali;Appl. Phys.,1978

5. Annealing of radiation defects by laser radiation pulses;Kachurin,1975

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1. Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing;Materials Science in Semiconductor Processing;2024-12

2. Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge;Applied Physics Letters;2024-07-29

3. Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods;Journal of Vacuum Science & Technology B;2024-06-12

4. Ultrafast Laser Hyperdoped Black Silicon and Its Application in Photodetectors: A Review;physica status solidi (a);2024-06-11

5. Defect engineering for improved thermal stability of sulfur hyperdoped silicon;Materials Science in Semiconductor Processing;2024-06

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