Impact of remote oxygen scavenging on the interfacial characteristics of atomic layer deposited LaAlO3

Author:

Wang Yongte,Liu Hongxia,Wang Xing,Zhao Lu

Funder

National Natural Science Foundation of China

Foundation for Fundamental Research of China

Major Fundamental Research Program of Shaanxi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, et al., IEEE International Electron Devices Meeting, 2008, pp. 247–250.

2. Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal Gate CMOS Technology

3. T. Ando, M.M. Frank, K. Choi, C. Choi, J. Bruley, M. Hopstaken, et al., IEEE International Electron Devices Meeting, 2009, pp. 1–4.

4. High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

5. Measurement of the band offsets between amorphous LaAlO3 and silicon

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