Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer-Reference-Cited by-同舟云学术

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Performance enhancement of AlGaN-based UV-LEDs inserted with a pin-doped AlGaN layer between the active region and electron-blocking layer

Published:2018-08 Issue: Volume:83 Page:133-138
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Xin,Sun Hui-Qing,Yang Xian,Yi Xin-Yan,Sun Jie,Zhang Xiu,Liu Tian-Yi,Guo Zhi-You,Zhao Ling-Zhi

Funder

Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province, China

Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China

Science and Technology Program Project of Guangdong Province, China

Science and Technology Projects of Guangzhou, China

Special Project for Key Science and Technology of Zhongshan City, Guangdong Province, China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer

2. Enhancement of hole injection with Mg–Si-codoped barriers in InGaN-based light-emitting diodes

3. Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN

4. The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes;Materials Science in Semiconductor Processing;2024-02

2. Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance;Physica B: Condensed Matter;2023-06

3. On the Near-Pole Hole Insertion Layer and the Far-Pole Hole Insertion Layer for Multi-Quantum-Well Deep Ultraviolet Light-Emitting Diodes;Nanomaterials;2022-02-14

4. Performance enhancement of AlGaN-based deep ultraviolet light-emitting diodes by using stepped and super-lattice n-type confinement layer;Superlattices and Microstructures;2020-05

5. Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer;Semiconductor Science and Technology;2020-04-09

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